Fewer Dislocations
We produce GaN on Silicon wafers with fewer dislocations using our patented technology, fully compatible with conventional process technology
Better Devices
Enabling very low dislocation count and thick GaN layers means higher voltages, improved device properties, and improved reliability
Improved Cost-Performance
Our technology enables high quality GaN at the cost of Si-based materials
GaN thickness scaling beyond 10µm for beyond 1200V vertical designs
Coalesced GaN on Silicon wafer
< 0,4nm roughness
Low dislocation density